2002. 10. 23 1/3 semiconductor technical data kta1834d/l epitaxial planar pnp transistor revision no : 4 features low collector saturation voltage. : v ce(sat) =0.16v(typ.) at (i c =-4a, i b =-0.05a) large collector current : i c =-10a(dc) i c =-15a(10ms, single pulse) complementary pair with ktc5001d/l. maximum rating (ta=25 ) dpak dim millimeters a b c d f h i j k l 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 2.70 0.2 2.30 0.1 1.00 max 2.30 0.2 0.5 0.1 2.00 0.20 0.50 0.10 e 0.91 0.10 m 0.90 0.1 o a c d b e k i j q h f f m o p l 123 1. base 2. collector 3. emitter 1.00 0.10 p 0.95 max q + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) note : h fe (1) classification gr:180~390. characteristic symbol rating unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -20 v emitter-base voltag v ebo -6 v collector current i c -10 a i cp -15 base current i b -2 a collector power dissipation ta=25 p c 1.3 w tc=25 10 junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-20v - - -10 a emitter cut-off current i ebo v eb =-5v - - -10 a collector-base breakdown voltage bv cbo i c =-50 a -30 v collector-emitter breakdown voltage bv ceo i c =-1ma -20 v emitter-base breakdown voltage bv ebo i e =-50 a -6 v dc current gain h fe (1) (note) v ce =-2v, i c =-0.5a 180 - 390 h fe (2) v ce =-2v, i c =-4.0a 82 - - collector-emitter saturation voltage v ce(sat) i c =-4.0a, i b =-0.05a - -0.16 -0.25 v base-emitter saturation voltage v be(sat) i c =-4a, i b =-0.05a - -0.9 -1.2 v transition frequency f t v ce =-5v, i e =1.5a, f=50mhz - 150 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 220 - pf dim millimeters ipak d b q e h f f c a p l i j 123 a b c d e f g h i j l p q 6.60 0.2 6.10 0.2 5.0 0.2 1.10 0.2 9.50 0.6 2.30 0.1 0.76 0.1 1.0 max 2.30 0.2 0.5 0.1 0.50 0.1 1.0 0.1 0.90 max g 1. base 2. collector 3. emitter k 2.0 0.2 k + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _
2002. 10. 23 2/3 kta1834d/l revision no : 4 c -0.001 collector current i (a) dc current gain h fe collector current i (a) c 0 collector emitter voltage v (v) be be c i - v h - i -0.2 fe c fe h - i c collector current i (a) dc current gain h c fe -0.01 -0.1 -1 -10 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 v =-2v ce ta=150 c ta=25 c ta=-55 c -0.01 -0.1 -1 -10 -20 v =-5v ce 30 1k 50 100 300 500 ta=25 c v =-2v ce v =-1v ce 30 v =-2v ce -0.1 -0.01 -1 ta=150 c -20 -10 50 100 300 500 1k 2k ta=25 c ta=-55 c collector saturation collector current i (a) -0.01 -0.03 -0.1 -0.3 c ce(sat) -3 v - i ce(sat) c voltage v (mv) -1 -3 -10 -20 ta=25 c 40 -10 -30 -100 -300 -1k i /i =80 b c 20 voltage v (v) collector saturation collector current i (a) -10 -3 c -300 -100 -30 ce(sat) -1k i /i =80 cb ta=-55 c v - i ce(sat) c -0.1 -0.01 -1 -10 -20 ta=150 c ta=25 c ta=25 c ta=150 c ta=-55 c -0.1 collector current i (a) base saturation -0.01 -3 be(sat) -100 voltage v (mv) -30 -10 -1k -300 i /i =80 b c -1 c -10 -20 c be(sat) v - i
2002. 10. 23 3/3 kta1834d/l revision no : 4 collector output capacitance collector-base voltage v (v) ce c - v ob ce emitter current i (a) transition frequency f (mhz) t e f - i te ta=25 c f=50mhz v =-5v 500 50 10 30 100 300 1k 0.01 0.03 0.1 0.3 1 3 10 ce -0.3 -0.1 e f=1mhz -3 -1 -10 -30 -100 ta=25 c i =0a 50 1k 100 300 500 3k c (pf) ob -0.3 base-emitter voltage v (v) emitter input capacitance c (pf) 100 ib 1k -0.1 eb -1 -3 -10 c - v ib eb 300 500 3k 5k 10k -0.05 ta=25 c i =0a f=1mhz c collector power dissipation pc (w) 0 0 ambient temperature ta ( c) c p - ta safe operating area ce collector-emitter voltage v (v) 30 c 0.01 collector current i (a) 0.3 0.03 0.1 1 3 10 single nonrepetitive pulse tc=25 c curves must be derated linearly with increase * i max(pulse) c * * 10ms 100ms * dc operation tc=25 c tc=ta infinite heat sink no heat sink 1 2 1 2 0.01 0.03 0.1 0.3 1 3 10 30 25 50 75 100 125 150 2 4 6 8 10 12
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